China’s new chip stores data with a single electron, breaking AI memory bottleneck

How many electrons does it take to store a single bit of information?
For today’s most advanced dynamic random access memory (DRAM) chips from Samsung and SK Hynix, the answer is roughly 200,000.
That is the price of reliability – a vast reservoir of charge needed to ensure a “1” or “0” does not fade into noise.
But a team at Fudan University in Shanghai has just collapsed that number to its theoretical floor: one.
In a paper published on July 16 in Science, microelectronics professor Zhou Peng...